Photosensitive pixel structure with increased light absorption and photosensitive implant
US12201827B2 · kind B2 · utility
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1References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 2021 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Nov 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
The present invention refers to a photosensitive pixel structure comprising a substrate with a front surface and a back surface, wherein at least one photosensitive diode is provided on one of the surfaces of the substrate. A first material layer is provided at least partially on the back surface of the substrate, wherein the material layer comprises a reflective layer, in order to increase a reflectivity at the back surface of the substrate. Further, the present invention refers to an array and an implant comprising such a photosensitive pixel structure, as well as to a method to produce the pixel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.