Anti-blooming buffered direct injection pixels
US12203808B1 · kind B1 · utility
0Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2023 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Sep 28, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/446
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pixel disclosed includes an anti-blooming injection transistor (DI) transistor under the control of a BDI amplifier/transistor combination. The “turn on” of the anti-blooming injection transistor is offset from the turn on of the BDI transistor by an offset. When the offset is overcome, excess charge can be diverted (iDiverted) away from an integration capacitor. This can allow the BDI transistor/amplifier combination to hold the detector at nominal bias over an extended range and may reduce blooming. The pixel can be implemented in manner that adds a second transistor and a capacitor to prior BDI designs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.