Semiconductor device
US12205952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2023 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Dec 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.