Avalanche photodiode array

US12205967B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Rainer Richter · Munich, DE
• Florian Schopper · Munich, DE
• Jelena Ninkovic · Munich, DE
• Alexander Bähr · Inzigkofen, DE

Key dates

• Filing date: Mar 30, 2020
• Grant date: Jan 21, 2025
• Expiry date: Nov 17, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/809

Abstract

An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate (100) having a first main surface (101) and a second main surface (102), which are opposite one another, a plurality of n-doped anode regions (1) formed at the first main surface (101) and separated from one another by pixel isolation regions (7), a p-doped cathode region (3) arranged at the second main surface (102) opposite the anode regions, a drift region (4) between the plurality of anode regions (1) and the cathode region (3), and a p-doped multiplication layer (2) arranged below the plurality of anode regions (1) and below the pixel isolation regions (7), and is characterized by an n-doped field reduction layer (9) arranged below the plurality of anode regions (1) and the pixel isolation regions (7) and above the multiplication layer (2).