Patent · US Active

Wafer, optical emission device, method of producing a wafer, and method of characterizing a system for producing a wafer

US12205987B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

TECHNISCHE UNIVERSITÄT MÜNCHEN · DE

Inventors

Christian Dangel · Munich, DE
Jonathan Finley · Aschheim, DE
Kai Müller · Ainring, DE
Frederik Bopp · Munich, DE
Arne Ludwig · Witten, DE
Nikolai Bart · Bochum, DE
Andreas Wieck · Sindelfingen, DE

Key dates

Filing date	May 28, 2020
Grant date	Jan 21, 2025
Priority date	—
Expiry date	May 28, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/4755
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer includes a substrate and at least one intermediate layer formed on a surface of the substrate. The at least one intermediate layer covers the surface of the substrate at least partially. An outer surface of the at least one intermediate layer is directed away from the surface of the substrate. The wafer further includes nanostructures grown on the outer surface of the at least one intermediate layer. The at least one intermediate layer is formed in such a way that positions of growth of the nanostructures are predetermined on the outer surface of the at least one intermediate layer. At least one nanostructure material of the nanostructures is assembled at the positions of growth of the nanostructures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.