Cell structure of silicon carbide MOSFET device, and power semiconductor device

US12205991B2 · kind B2 · utility

Assignee

• ZHUZHOU CRRC TIMES SEMICONDUCTOR CO. LTD. · CN

Inventors

• Yafei Wang · Shanghai, CN
• Changwei Zheng · Hunan, CN
• Shasha JIAO · Hunan, CN
• Chengzhan Li · Zhuzhou, CN
• Haihui Luo · Hunan, CN

Key dates

• Filing date: Jun 10, 2020
• Grant date: Jan 21, 2025
• Expiry date: Aug 26, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10

Abstract

A cell structure of a silicon carbide MOSFET device, comprising a drift region (3) located on a substrate layer (2), a second conducting type well region (4) and a first JFET region (51) that are located in the drift region (3), an enhancement region located within a surface of the well region (4), a gate insulating layer (8) located on a first conducting type enhancement region (6), the well region (4) and the first JFET region (51) and being in contact therewith at the same time, a gate (9) located on the gate insulating layer, source metal (10) located on the enhancement region, Schottky metal (11) located on a second conducting type enhancement region (7) and the drift region (3), a second JFET region (52) located on a surface of the drift region (3) between the Schottky metals (11), and drain metal (12).