Metal-oxide thin-film transistor and method for fabricating same, display panel, and display device
US12205999B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Aug 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Provided is a metal-oxide thin-film transistor. The metal-oxide thin-film transistor includes a gate, a gate insulation layer, a metal-oxide semiconductor layer, a source electrode, a drain electrode, and a passivation layer that are successively disposed on a base substrate; wherein the source electrode and the drain electrode are both in a laminated structure, wherein the laminated structure of the source electrode or the drain electrode at least includes a bulk metal layer and an electrode protection layer; wherein the electrode protection layer includes a metal or a metal alloy; the electrode protection layer is at least disposed between the metal-oxide semiconductor layer and the bulk metal layer; wherein a metal-oxide layer is disposed between the electrode protection layer and the bulk metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.