Monolithic pin and Schottky diode integrated circuits
US12206031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2022 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jun 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/444
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A number of Monolithic Microwave Integrated Circuit (MMIC) devices including combinations of PIN and Schottky diodes, with integrated passive electrical components fabricated and electrically connected among them, are described herein, along with new process techniques for forming the MMIC devices. In one example, a monolithic semiconductor includes a substrate, a plurality of layers of semiconductor materials over the substrate, Schottky and Ohmic contacts on a first subset of the plurality of layers for a Schottky diode, and PIN diode Ohmic contacts on a second subset of the plurality of layers for a PIN diode. The device can also include an etch stop layer between the first subset of the plurality of layers and the second subset of the plurality of layers. The etch stop layer facilitates selective etching and isolation of the Schottky diode from the PIN diode by consecutive etchings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.