Bulk acoustic wave resonator and fabrication method thereof
US12206382B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 18, 2023 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Dec 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, a cap wafer disposed above the piezoelectric layer, a top electrode disposed on the piezoelectric layer, a bottom electrode disposed below the piezoelectric layer, a first pad metal layer disposed on and electrically connected to the top electrode. a second pad metal layer disposed on and electrically connected to the bottom electrode, a top bonding layer disposed below the cap wafer, for bonding the cap wafer with the piezoelectric layer; and a bond contacting layer disposed between the top bonding layer and each one of the first pad metal layer and the second pad metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.