Reconfigurable heterojunction memristor, control method, fabrication method and application thereof
US12207574B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2024 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jun 19, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure discloses a reconfigurable heterojunction memristor, a control method, a fabrication method, and an application thereof. The functional layer designed by the disclosure comprises a PN heterojunction of n-AgO and p-Ag2O or a PN heterojunction of n-CuO2 and p-CuO. In the analog type, multiple resistance state performance is exhibited based on charge trapping and releasing, and self-rectification characteristics are exhibited, without the need for a selector, which facilitates large-scale integration; in the digital type, the presence of Ag/Cu ions in the layer helps to form Ag/Cu conductive filaments, the switching threshold voltage is small, and the advantages of fast switching speed and low switching power consumption are provided. The disclosure realizes a PN heterojunction device of an N-type oxide layer and a P-type oxide layer through electrochemical principles, and is analog type-digital type reconfigurable between a self-rectifying analog type device and a digital type device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.