CMUT-on-CMOS ultrasonic transducer by bonding active wafers and manufacturing method thereof
US12208416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2022 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | May 9, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0792
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a new architecture of system-on-chip ultrasonic transducer array. It is based on fusion bond of two active wafers which have prefabricated CMOS integrated circuits and CMUT structures; precise thin-down of one wafer to form CMUT monocrystalline silicon membrane; and then to vertically connect CMUT array to CMOS IC layers underneath. This architecture can realize a high-density CMUT array with multiple layers of CMOS devices, such as all supporting CMOS ICs, to achieve a SOC solution. The present invention further provides a manufacturing method for above-mentioned SOC CMUT approach, and this manufacturing process can be realized in both 8 inch and 12-inch wafer manufacturing fabs. The disclosed manufacturing processes are more compatible with existing CMOS process flow, more cost-competitive for mass production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.