Patent · US Active

System and method for submicron additive manufacturing

US12208569B2 · kind B2 · utility

0Cited by
6References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 18, 2020
Grant dateJan 28, 2025
Priority date
Expiry dateSep 30, 2042

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB33Y30/00
  • WIPO fieldOther special machines
  • WIPO sectorMechanical engineering

Abstract

The present disclosure relates to a method for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material. A laser beam is directed at a tunable mask. At least one emergent beam is collected from a plurality of emergent beams emerging from the tunable mask. The at least one emergent beam is collimated to create a collimated beam. Each emergent beam from the tunable mask has a plurality of beam lets of varying or identical intensity, and each beam let emerges from a unique subsection or region of the tunable mask. The collimated beam is focused into a laser beam which is projected as an image plane onto or within the photopolymer resist material, such that the same optical path length is created between the tunable mask and the focused image plane for all optical frequencies of the focused laser beam. The focused laser beam illuminates a select pattern of subsections on the tunable mask for a finite duration of time to cause simultaneous polymerization of select portions of the photopolymer resist material corresponding to the select pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.