PVT-method and device for producing single crystals in a safe manner with regard to the process

US12209327B2 · kind B2 · utility

Assignee

• PVA TEPLA AG · DE

Inventors

• Michael Schöler · Rheurdt, DE
• Lorenz Vogel · Staufenberg, DE
• Karsten Viehmann · Hüttenberg, DE
• Tomas Baumecker · Bruchköbel, DE

Key dates

• Filing date: Sep 16, 2022
• Grant date: Jan 28, 2025
• Expiry date: Sep 16, 2042

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A PVT method is utilized for production of single crystals in an apparatus, which comprises a growth cell, a process chamber in which the growth cell is located and a heating device surrounding the process chamber for heating the growth cell. In this method, a source material and a seed are introduced into the growth cell, and the process chamber is filled with a process gas and the growth cell is heated, causing the source material to sublimated and resublimated at the seed. An apparatus designed for production of single crystals using the PVT method includes a highly heatable growth cell for accommodation of a source material and a seed, a process chamber accommodating the growth cell with a connection to a process gas source for filling it with a process gas, and a heating device for heating the growth cell.