Patent · US Active

Memory system with verify operations of odd and even word lines

US12211567B2 · kind B2 · utility

1Cited by
4References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 2, 2022
Grant dateJan 28, 2025
Priority date
Expiry dateJan 11, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5621
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system according to an embodiment includes a first bit line, a source line, a first word line, a second word line, a first memory pillar and a control circuit. The control circuit performs a first verify operation to first and second memory cells, a second verify operation to the first memory cell, a third verify operation to the second memory cell and a write operation or a read operation with a lower voltage in accordance with a request from an external device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.