Methods of forming SOI substrates
US12211686B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Jul 21, 2023 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Jul 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.