Semiconductor structure and method for manufacturing same
US12211767B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Mar 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes: a substrate; a through silicon via structure that is located in the substrate; a first heat dissipation layer that is around a side wall of the through silicon via structure, and a material of which is a metal semiconductor compound; and a second heat dissipation layer that is around the side wall of the through silicon via structure and located between the first heat dissipation layer and the through silicon via structure, and a heat conductivity of which is greater than a heat conductivity of the first heat dissipation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.