Semiconductor structure with a second isolation dam and manufacturing method thereof
US12211852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Aug 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate, a first isolation dam, a plurality of switching transistors and a second isolation dam. The semiconductor substrate includes a trench, an isolation region formed by a region where the trench is located, a plurality of active regions defined by the isolation region, and an electrical isolation layer, the electrical isolation layer being located on one side, away from an opening of the trench, of the trench; the first isolation dam fills the trench; the switching transistor is at least partially embedded in the active region of the semiconductor substrate; and the second isolation dam is at least partially located between the first isolation dam and the electrical isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.