Image sensor
US12211880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2023 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Nov 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.