Silicon carbide semiconductor device and method for manufacturing the same
US12211902B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Nov 8, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Mar 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a source region is made of an epitaxial layer so as to reduce variation in thickness of a base region and variation in a threshold value. Outside of a cell part, a side surface of a gate trench is inclined relative to a normal direction to a main surface of a substrate, as compared with a side surface of a gate trench in the cell part that is provided by the epitaxial layer of the source region being in contact with the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.