Vertical field-effect transistor and method for forming same

US12211939B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Jens Baringhaus · Sindelfingen, DE
• Daniel Krebs · Aufhausen, DE
• Dick Scholten · Stuttgart, DE

Key dates

• Filing date: Sep 21, 2020
• Grant date: Jan 28, 2025
• Expiry date: Nov 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/235

Abstract

A vertical field-effect transistor. The transistor includes: a drift region having a first conductivity type; a semiconductor fin on or over the drift region; and a source/drain electrode on or over the semiconductor fin, the semiconductor fin having an electrically conductive region that connects the source/drain electrode to the drift region in electrically conductive fashion, and having a limiting structure that is formed laterally next to the electrically conductive region and that extends from the source/drain electrode to the drift region, the limiting structure being set up to limit a conductive channel of the vertical field-effect transistor in the semiconductor fin to the area of the electrically conductive region.