Flip-chip light-emitting diode comprising multiple transparent dielectric layers and distributed Bragg reflector (DBR) structure

US12211957B2 · kind B2 · utility

Assignee

• TIANJIN SANAN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Weiping XIONG · Xiamen, CN
• Xin Wang · Chandler, US
• Zhiwei WU · Taiyuan, CN
• Di Gao · Zhejiang, CN
• Yu-Ren PENG · Hsinchu, TW
• Huan-Shao KUO · Tianjin, CN

Key dates

• Filing date: Jan 7, 2022
• Grant date: Jan 28, 2025
• Expiry date: Apr 29, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than λ/2n1, and the second transparent dielectric layer has a thickness of mλ/4n2, wherein m is an odd number, λ is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.