Semiconductor light-emitting apparatus and method of fabricating semiconductor light-emitting apparatus
US12212115B2 · kind B2 · utility
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27Claims
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Key dates
| Filing date | Feb 8, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Apr 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.