Semiconductor device and method of forming high KT2 high Q acoustic wave resonator
US12212305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2022 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Mar 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0442
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave resonator has a first conductive layer, piezoelectrical material formed over the first conductive layer, and second conductive layer formed over the piezoelectric material. An alignment of the first conductive layer, piezoelectric material and second conductive area defines an active region of the resonator and the active region includes a core area and a plurality of fractals extending from or recessed into the core area. The fractals maximize a perimeter-to-area ratio of the active region of the resonator. The fractals increase electromechanical coupling and a quality factor of the resonator. The fractals can have a star shape, rounded shape, asymmetric shape, or other shape that optimizes the perimeter-to-area ratio of the active region to maximize performance of the resonator. A frame can be disposed over or within the piezoelectric material. The frame is raised above the second conductive layer or recessed below the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.