Semiconductor device and method of fabricating the same

US12213303B2 · kind B2 · utility

Assignee

• Fujian Jinhua Integrated Circuit Co., Ltd. · CN

Inventors

• Yukihiro Nagai · Taichung, TW
• Lu Lin · Fujian, CN
• Chia-Wei Wu · Taichung, TW
• Tsun-Min Cheng · 埔鹽鄉, TW
• Yu-Chun Lin · Tainan, TW
• Zheng Guo Zhang · Jingu, CN
• Sun-Hung Chen · Jingu, CN
• Wu LI · Yokkaichi, JP
• Hsiao-Han Lin · Hsinchu, TW

Key dates

• Filing date: Apr 21, 2022
• Grant date: Jan 28, 2025
• Expiry date: Feb 3, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/315

Abstract

The present disclosure provides a semiconductor device and a fabricating method thereof, and which includes a substrate, bit lines, bit line contacts, a gate structure, a first oxidized interface layer, and a second oxidized interface layer. The bit lines are disposed on the substrate, and the bit line contacts are disposed below the bit lines. The gate structure is disposed on the substrate, wherein each bit line and the gate structure respectively include a semiconductor layer, a conductive layer, and a covering layer stacked from bottom to top. The first oxidized interface layer is disposed between each bit line contact and the semiconductor layer of each bit line. The second oxidized interface layer is disposed within the semiconductor layer of the gate structure, wherein a topmost surface of the first oxidized interface layer is higher than a topmost surface of the second oxidized interface layer.