Spin-orbit torque structure including topological materials and magnetic memory device including the spin-orbit torque structure
US12213387B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Jul 27, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
Abstract
The present disclosure provides a spin-orbit torque structure having a high spin Hall angle and low resistance by including a topological material. In addition, the present disclosure provides a spin-orbit torque structure having a low power consumption density by including a topological material. Also, a magnetic memory device including the spin-orbit torque structure is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.