Apparatuses and method for oriented deposition
US12215418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2020 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Jan 4, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatuses and a method for gas phase deposition of high aspect ratio molecular structures, HARM-structures, are presented. The first aspect relates to an apparatus configured for oriented gas phase deposition of HARM-structures on a filter. The second aspect relates to an apparatus configured for oriented gas phase deposition of HARM-structures on a substrate. A system comprising multiple apparatuses according to the second aspect is also presented. Elements of the apparatuses are arranged to create a laminar flow of gas comprising HARM-structures in the deposition area, and to direct this flow at least partially parallel to the deposition area. Another aspect of the invention is a method for oriented deposition of HARM-structures, suitable for deposition both on a filter and a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.