Hydrogen-sensitive material resistant to humidity interference, semiconductor resistive hydrogen sensor, and intelligent hydrogen sensing system, and preparation method and use thereof
US12216073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2024 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Sep 11, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/005
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a hydrogen-sensitive material resistant to humidity interference, a semiconductor resistive hydrogen sensor, and an intelligent hydrogen sensing system, and a preparation method and use thereof, which relate to the technical field of gas sensors. The hydrogen-sensitive material resistant to humidity interference includes a three-dimensional (3D) porous non-conductive metal oxide substrate, a nano-scale WO3-x film deposited on an outer surface and an inner pore surface of the 3D porous non-conductive metal oxide substrate, and Pd nanoclusters diffusely distributed on a surface of the nano-scale WO3-x film, wherein the nano-scale WO3-x film is formed from oxygen vacancy-containing tungsten oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.