DC bias in plasma process
US12217936B2 · kind B2 · utility
0Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Nov 8, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Nov 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.