Semiconductor devices and methods of manufacture
US12217960B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 31, 2021 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Nov 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of manufacture are provided whereby fences are formed over a substrate and III-V materials are grown over the substrate, wherein the fences block growth of the III-V materials. As such, smaller areas of the III-V materials are grown, thereby preventing stresses that occur with the growth of larger sheets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.