Plasma etching method using perfluoropropyl carbinol
US12217970B2 · kind B2 · utility
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11Claims
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Assignee
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Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Dec 21, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.