Optical receiver comprising monolithically integrated photodiode and transimpedance amplifier
US12218157B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2020 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Jan 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B10/60
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance CPIN. The TIA capacitance CTIA may be matched to CPIN. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance CPIN+CTIA; and feedback resistance RF of the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.