Image sensor and manufacturing method thereof
US12218159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2022 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Apr 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
An image sensor includes a storage device, where the storage device includes a memory element, a first dielectric layer and a light shielding element. The memory element includes a storage node and a storage transistor gate, where the storage transistor gate is located over the storage node. The first dielectric layer is located over a portion of the storage transistor gate. The light shielding element is located on the first dielectric layer and includes a semiconductor layer. The semiconductor layer is electrically isolated from the memory element, where the light shielding element is overlapped with at least a part of a perimeter of the storage transistor gate in a vertical projection on a plane along a stacking direction of the memory element and the light shielding element, and the stacking direction is normal to the plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.