Solid-state imaging device and electronic device
US12218167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2019 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Mar 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
To provide a solid-state imaging device capable of further improving quality. Provided is a solid-state imaging device including: a first semiconductor element having a first semiconductor layer provided with a first through via and a photoelectric conversion unit configured to photoelectrically convert light that has been incident, a connection part that is wider than the first through via and is provided outside a region where the photoelectric conversion unit is provided on a surface of the first semiconductor layer on a side for receiving the light, connection wiring provided on the surface and configured to connect the first through via and the connection part, and a first passivation layer formed on the surface side; a second semiconductor element mounted on the first semiconductor element by the connection part; and a first guard ring formed on an outer peripheral portion of the first semiconductor element to surround the first semiconductor element. In the solid-state imaging device, at least a part of the first guard ring is arranged outside the first semiconductor layer and above a second semiconductor layer formed in substantially the same layer as the first semiconducto…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.