Semiconductor structure and manufacturing method thereof
US12218191B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2024 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Mar 16, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a silicon carbide layer, which has a unit region and a termination region surrounding the unit region. A first guard ring structure is located in the termination region of the silicon carbide layer, and adjoins a top surface of the silicon carbide layer. The first guard ring structure may include at least one first guard ring well region. A second guard ring structure is located in the silicon carbide layer and below the first guard ring structure. The second guard ring structure may include at least one second guard ring well region, which corresponds to the at least one first guard ring well region in a vertical direction. A method for manufacturing the semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.