Radical treatment in supercritical fluid for gate dielectric quality improvement to CFET structure
US12218225B1 · kind B1 · utility
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Key dates
| Filing date | Dec 20, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Dec 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0144
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a method that includes providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region; forming a gate dielectric layer over and wrapping around top channels in the top channel region; performing a radical treatment on the dielectric layer in a supercritical fluid; and forming a metal gate electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.