Semiconductor structure
US12218227B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.