Semiconductor device including compound and nitride members

US12218232B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Daimotsu Kato · Tokyo, JP
• Hiroshi Ono · Setagaya, JP
• Yosuke Kajiwara · Yokohama, JP
• Aya Shindome · Yokohama, JP
• Akira Mukai · Kawasaki, JP
• Po-Chin Huang · Taipei, TW
• Masahiko Kuraguchi · Yokohama, JP
• Tatsuo Shimizu · Shinagawa, JP

Key dates

• Filing date: Mar 1, 2022
• Grant date: Feb 4, 2025
• Expiry date: Apr 8, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/681

Abstract

A semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions.The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode.