High electron mobility transistor and method of manufacturing the same
US12218233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2022 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Oct 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor and a method of manufacturing the same are disclosed. The high electron mobility transistor includes a channel layer, a channel supplying layer causing generation of a two-dimensional electron gas (2DEG) in the channel layer, a source electrode and a drain electrode provided on respective sides of the channel supplying layer, a depletion forming layer provided on the channel supplying layer to form a depletion region in the 2DEG, a gate electrode provided on a portion of the depletion forming layer, and a current limiting layer provided to contact the gate electrode on another portion of the depletion forming layer. The current limiting layer limits a current flow from the gate electrode to the depletion forming layer according to a voltage applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.