Semiconductor template and fabrication method
US12218275B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Mar 18, 2020 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Oct 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.