Method for fabricating a semiconductor device having a single crystal storage contact
US12219753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Dec 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.