Patent · US Active

Nonvolatile memory chip and semiconductor package including the same

US12219774B2 · kind B2 · utility

0Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 26, 2021
Grant dateFeb 4, 2025
Priority date
Expiry dateApr 16, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06562
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A non-volatile memory chip comprises a cell region that includes a first surface, a second surface opposite to the first surface, a first cell structure, and a second cell structure spaced apart from the first cell structure; a peripheral circuit region on the first surface of the cell region, and that includes a first peripheral circuit connected to the first cell structure, a second peripheral circuit connected to the second cell structure, and a connection circuit between the first and second peripheral circuits; a through via between the first and second cell structures and that extends from the second surface of the cell region to the connection circuit of the peripheral circuit region; a redistribution layer that covers the through via on the second surface of the cell region, is connected to the through via, and extends along the second surface; and a chip pad connected to the redistribution layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.