Optoelectronic component comprising, on a single substrate, an optical transducer made of a semi-conductor material III-V and an optically scanning microelectromechanical system
US12219878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Feb 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/407
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An optoelectronic component includes an optical transducer made of III-V semiconductor material and an optical scanning microelectromechanical system comprising a mirror. The optical transducer and the optical scanning microelectromechanical system are produced on a common wafer comprising at least a first layer made of silicon or silicon nitride with a thickness of less than one micron and wherein at least the mirror and its holding springs are produced. In a first variant, the mobile parts of the optical scanning microelectromechanical system are produced in various layers of silicon. In a second variant, the mobile parts of the optical scanning microelectromechanical system are produced in the layer of III-V semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.