High voltage power converter
US12220987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2024 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Apr 3, 2044 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB60L2240/525
- WIPO fieldTransport
- WIPO sectorMechanical engineering
Abstract
A power electronics converter includes a multi-layer planar carrier substrate and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element. Each power semiconductor switching element is included in a power semiconductor prepackage. One or more terminals of the power semiconductor switching element are connected to at least one conductive layer of the multi-layer planar carrier substrate at an electrical connection side of the power semiconductor prepackage. The electrical connection side is spaced apart in a z-direction from the carrier substrate by a prepackage gap. A peak rated power output of the power electronics converter is greater than or equal to 25 kW, and a converter parameter θ, which is defined as a size in the z-direction of the prepackage gap divided by a maximum electric field strength in the prepackage gap, is less than or equal to 300 pm2/V.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.