Polishing composition and polishing method
US12221557B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Feb 24, 2022 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jan 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.