Thin film sensor and manufacturing method thereof
US12222381B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Mar 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q1/38
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a thin film sensor and a manufacturing method thereof, and belongs to the technical field of sensors. The thin film sensor of the present disclosure has a plurality of conductive-wire regions intersecting each other, and a plurality of hollow-out parts defined by the plurality of conductive-wire regions; the thin film sensor includes: a base substrate; a plurality of conductive wires on the base substrate, with the conductive wires being in the conductive-wire regions one to one; and a functional structure on the base substrate, where the functional structure is configured to allow at least part of light, which is transmitted along a preset direction and enters the functional structure from the conductive wire-regions, to exit from the hollow-out parts, and the preset direction is a direction from the base substrate towards the conductive wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.