Manufacturing method of metal grid, thin film sensor and manufacturing method of thin film sensor
US12224234B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Mar 15, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jul 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q1/36
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a metal grid includes: providing a base substrate; forming a pattern including a first dielectric layer on the base substrate through a patterning process such that the first dielectric layer has a first groove in a lattice shape; forming a second dielectric layer on a side of the first dielectric layer away from the base substrate such that the second dielectric layer is deposited at least on a sidewall of the first groove to form a second groove in a lattice shape; and forming a metal material in the second groove, and removing at least a part of a material of the second dielectric layer such that an orthographic projection of the part of the material of the second dielectric layer on the base substrate does not overlap with an orthographic projection of the metal material on the base substrate, to form a metal grid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.