Image sensor including a pixel separation structure
US12224296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jul 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.