Trench transistor

US12224329B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Christian Tobias Banzhaf · Laichingen, DE
• Jan-Hendrik Alsmeier · Pfullingen, DE
• Stephan Schwaiger · Bodelshausen, DE
• Wolfgang Feiler · Reutlingen, DE
• Dick Scholten · Stuttgart, DE
• Klaus Heyers · Reutlingen, DE

Key dates

• Filing date: Aug 24, 2020
• Grant date: Feb 11, 2025
• Expiry date: Nov 2, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.