Micro-sized face-up led device with micro-hole array and preparation method thereof

US12224377B2 · kind B2 · utility

Assignees

• South China University of Technology · CN
• ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY · CN

Inventors

• Hong Wang · 流花街道, CN
• Lijun Tan · Lo Wu, CN
• Ruohe Yao · 流花街道, CN
• Kai Wang · Beijing, CN
• Zijing Xie · 流花街道, CN

Key dates

• Filing date: Mar 16, 2022
• Grant date: Feb 11, 2025
• Expiry date: Aug 22, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.