Power amplifier with quasi-static drain voltage adjustment
US12224721B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 29, 2021 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | May 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.